100M-500M低噪放设计方案
Low Noise E-pHEMT Amplifier Design
Using Avago Technologies’ EEsof Advanced Design System software, the amplifier circuit can be simulated in both linear and non-linear modes of operation. For the linear analysis the transistors can be modeled with a two-port s-parameter file using Touchstone format. More information about Avago Technologies’ EDA software may be found at: http://www.77cn.com.cn/eesof-eda. The appropriate ATF54143.s2p file can be downloaded from the Avago Technologies’ Wireless Design Center web site: http://www.type ATF-54143 in the Quick Search at the top of the page. Under Search Results, click on the underlined ATF-54143. Scroll down to the S-parameters listing for 60 mA).
For the non-linear analysis, a harmonic–balance (HB) simulation was used. HB is preferred over other non-linear methods because it is computationally fast, handles both distributed and lumped element circuitry, and can easily include higher-order harmonics and intermodulation prod-ucts. HB was used for the simulation of the 1 dB compression point (P-1dB) and output third order intercept point (OIP3). Although this non-linear transistor model closely predicts the DC and small signal behavior (including noise), it does not correctly predict the intercept point. To properly model the exceptionally high linearity of the E-pHEMT transistor, a better model is required.
Figure 1. ATF-54143 100-500 MHz HLA Active Bias Circuit Schematic.
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