Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC PC TJ TSTG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature
Value
150150 5 1.5 25150- 55 to 150
Units
VVVAW°C°C
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO hFE VCE(sat)
fT Cob
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 500μA, IE = 0
Min.
150150 5
Typ.Max.Units
VVV
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 Collector Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
VCB = 120V, IE = 0 VCE = 10V, IC = 0.5A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A VCB =10V, IE = 0,
f = 1MHz
10
40
75 450
140 1
μAVMHzpF
hFE Classification
Classification
hFE
H140 ~ 80
H260 ~ 125
© 2011 Fairchild Semiconductor CorporationKSC2073 Rev. A1
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