江阴长电科技2SD874贴片三极管(晶体管)规格书,SOT-89封装,外形尺寸与三极管型号参数详见规格书。整理发布：长电三极管授牌代理商南京南山半导体有限公司。
【南京南山半导体有限公司 — 长电贴片三极管选型资料】http://www.77cn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
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= =FEATURES =
=z Low Collector-Emitter Saturation Voltage =z Large Collector Power Dissipation =SOT-89-3L Plastic-Encapsulate Transistors 2SD874 TRANSISTOR (NPN) z Mini Power Type Package
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature 30 25 5 1 500 250 150 -55~+150 V V V A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol V(BR)CBO V(BR)CEOICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions Min Typ Max Unit IC=10µA,IEIC=2mA,IBV(BR)EBO IE=10µA,ICVCB=20V,IEVCE=10V, ICVEB=4V,ICVCE=5V, IC
IC=500mA,IB=50mA VCE=10V,IC=50mA, f=200MHzVCB=10V, IE=0, f=1MHz IC=500mA,IB=50mA 200 20 pF
CLASSIFICATION OF hFE(1)
RANGE 85–––340
A,Nov,2010