硅在水溶液中的反应机理(2)

2019-08-20 18:40

的反应速度,表征了一个化学反应的快慢程度,而且κ的大小取决于温度及反应物本性,与浓度无关。

因此,单晶硅中各晶面的腐蚀速率与温度之间的量化关系有:

R?e-Ea/KT

这与右图基本吻合结果基本吻合

参考文献

[1] M. Steinert, J. Acker, S. Oswald, K. Wetzig, Study on the Mechanism of Silicon Etching in HNO3-Rich HF HNO3 Mixtures. J. Phys. Chem. C111(2007) 2133-2140.

[2] I. Zubel, K. Rola, M. Kramkowska, The effect of isopropyl alcohol

concentration on the etching process of Si-substrates in KOH solutions. Sens. Actuators

A. 171 (2011) 436–445.

[3] T. Baum, D. Schiffrin, Kinetic isotopic effects in the anisotropic etching of p-Si〈100〉 in alkaline solutions, Journal of Electroanalytical Chemistry. 436 (1997) 239-244.

[4] M.Shikida,K.Sato , Comparison of anisotropic etching properties between KOH and TMAH solutions, Sensors and Actuators A,115:315-320(1999)

[5] J.Marchettia, Y.Hea,Efficient process development for bulk silicon etching, Micromachine Devices and Components.1998

[6] Irena Zubel,Etch rates and morphology of silicon (h k l) surfaces etched in KOH and KOH saturated with isopropanol solutions, Sensors and Actuators A,115:549-556(2004)

[7] OJ Glembocki, ED Palik, GR De Guel, Hydration model for the molarity dependence of the etch rate of Si in aqueous alkali hydroxides , Electrochemical Society,138:1055-1063(1991)


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