三：实验流程图
初始网格生成 网格的优化和开始 生成网络文件 选取适当物理模碰撞电离，载流子寿命，雪崩击穿，迁移率模型等 器件各个物理量的分布器件端口电学耦合求解方法 非耦合求解方 指定数值计算方加端口的偏置软件模拟 偏压、温度、 掺杂浓度，光 输出结果 图七 SILVACO的模拟流程图 四：源程序
对一个PMOS场效应管进行的漏源击穿特性运用SILVACO模拟软件进行分析，源程序如下：
go athena
# This is a simple input deck representing a Process flow and a device # test. All lines begining with a '#' sign may be treated as directive # comments.....
# Start the Athena Process simulator running... #
# Set up a mesh suitable for a single MOSFET device.... line x loc=0 spac=0.01 line x loc=0.25 spac=0.01 line x loc=0.5 spac=0.1 #
line y loc=0.00 spac=0.005 line y loc=0.3 spac=0.015 line y loc=0.5 spac=0.02 line y loc=2 spac=0.2 line y loc=5 spac=1 #
# Start off by defining silicon with 1e14 phos doping... # Decrease the folowing space.mult parameter for a denser # mesh and more accuracy...
init orientation=100 c.phos=1e14 space.mult=2 #
#pwell formation including masking off of the nwell #
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3 #
etch oxide thick=0.02 #
#N-well Implant
implant amorphous phos dose=2.9e13 energy=100 pears #
diffus temp=950 time=95 weto2 hcl=3 #
#N-well implant amorphous not shown - #
# welldrive
diffus time=220 temp=1200 nitro press=1 #
etch oxide all #
#sacrificial \
diffus time=20 temp=1000 dryo2 press=1 hcl=3 #
etch oxide all #
#gate oxide grown here:- set partial_press=1.0
diffus time=10 temp=800 nitrogen hcl=3
diffus time=2 temp=900 dryo2 press=$partial_press
diffus time=13 temp=900 dryo2 press=$partial_press hcl=3 diffus time=10 temp=900 nitrogen hcl=3
diffus time=10 temp=800 t.final=800 nit hcl=3 #
#vt adjust implant amorphous
implant amorphous bf2 dose=2.30e12 energy=25 pearson
#
depo poly thick=0.250 div=3 #
etch poly left p1.x=0.25 #
# Relax the mesh below the 0.5um plane, for speed.... relax y.min=0.5 #
method fermi compress
diffuse time=5 temp=900 weto2 press=0.8 #
# PLDD implant amorphous
implant amorphous bf2 dose=2.0e14 energy=50 pearson #
# This is a good way of defining the spacer.....define a variable # first with the 'set' command.... set spacer=0.15
depo oxide thick=$\etch oxide dry thick=$\#
# P++ Implant
implant amorphous bf2 dose=1.50e15 energy=60 pearson # #
# Final anneal. method fermi compress
diffuse time=5 temp=900 nitro press=1.0 #
# Extract other design parameters... # extract final S/D Xj...
extract name=\# extract the long chan Vt...
extract name=\# extract a curve of conductance versus bias....
extract start material=\mat.occno=1 bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name=\cond v bias\curve(bias,1dn.conduct material=\mat.occno=1 region.occno=1) outfile=\# extract the P++ regions sheet resistance...
extract name=\sheet rho\sheet.res material=\mat.occno=1 x.val=0.05 region.occno=1
# extract the sheet rho under the spacer, of the LDD region...
extract name=\sheet rho\sheet.res material=\mat.occno=1 x.val=0.3
region.occno=1
# extract the surface conc under the channel.... extract
name=\
surf
conc\
surf.conc
impurity=\
Doping\
material=\
# Etch contact cuts and place the aluminium where electrodes are required..... etch oxide left p1.x=0.15 deposit alumin thick=0.03 div=2 etch alumin right p1.x=0.16
# mirror the structure..... structure mirror right
# Name the electrodes... electrode name=gate x=0.5 electrode name=source x=0 electrode name=drain x=0.9
electrode name=substrate backside
go devedit
# Set Meshing Parameters #
base.mesh height=1000000 width=1000000 #
bound.cond !apply
max.slope=28
max.ratio=300
line.straightening=1 align.points when=automatic
#
imp.refine imp=\imp.refine min.spacing=0.02 #
constr.mesh max.angle=90 max.ratio=300 max.height=1 \\ max.width=1 min.height=0.0001 min.width=0.0001
#
# Perform mesh operations #
Mesh Mode=MeshBuild
refine mode=both x1=0.32 y1=0.22 x2=0.67 y2=0.28 refine mode=both x1=0.4 y1=0.22 x2=0.60 y2=0.25 refine mode=both x1=0.74 y1=0.32 x2=1.0 y2=0.48
# output the structure
structure outfile=mos1ex14_0.str
rnd.unit=0.001
# plot it
tonyplot mos1ex14_0.str -set mos1ex14_0.set
################### P-channel Vbd Extraction test #######################
go atlas
# add workfunction and interface charge contact name=gate n.polysilicon interf qf=1E10
# select MOS models
models cvt consrh print impact selb solve init
method newton trap ir.tol=1.e-25 ix.tol=1.e-25 climit=1e-4 solve
solve vdrain=-0.05 solve vdrain=-0.1
# Open log file to store the IV points in.... log outf=mos1ex14.log
solve vdrain=-0.25 solve vdrain=-0.5
solve vdrain=-1 vstep=-1 vfinal=-8 name=drain
solve vdrain=-8.025 vstep=-0.025 vfinal=-15 name=drain compl=1e-11 cname=drain save outf=mos1ex14_1.str
# Extract the design parameter, Vbd extract init inf=\
extract name=\x.val from curve(abs(v.\where y.val=1e-11
tonyplot mos1ex14.log -set mos1ex14_log.set quit
五：实验内容
1． 学习MOSFET的基本击穿特性，MOSFET 的击穿特性比较；各个结构参数对器
件击穿特性的影响
2． 对一个PMOS场效应管进行的漏源击穿特性运用SILVACO模拟软件进行分析； 3． 基于PMOS场效应管的仿真结果，对NMOS管进行模拟并分析。