材料科学与工程基础---课程考试安排与复习内容要求
考试方式：闭卷，中文出题，中文答题 考试题型：概念，论述，计算题三类 其中概念题请参考课本P480-494 自带格尺、铅笔、计算器
考试时间（1月13日下午1：00—3：00） 考试地点：
答疑安排：
日期：2011年1月11、12日 时间：晚上 6：30点 地点：答疑室（304）
各章复习重点题目 各章讲的例题和作业。
其他各章复习要点： 第1-4章，第3章为重点
重点为第三章。特别是三种常见的晶体结构以及晶面和晶向及其指数。
以下为学习目的中的重点。
1章 引言
L e a r n i n g O b j e c t i v e s
After careful study of this chapter you should be able to do the following:
1. List six different property classifications of materials that determine their applicability.
2. Cite the four components that are involved in the design, production, and utilization of materials, and briefly describe the interrelationships between these components.
3. Cite three criteria that are important in the materials selection process.
4. (a) List the three primary classifications of solid materials, and then cite the distinctive chemical feature of each.
(b) Note the other three types of materials and, for each, its distinctive feature(s).
2章 （基本概念）原子结构及原子间作用力 L e a r n i n g O b j e c t i v e s
After careful study of this chapter you should be able to do the following:
1. Name the two atomic models cited, and note the differences
between them.
2. Describe the important quantum-mechanical principle that relates to electron energies.
4. (a) Briefly describe ionic, covalent, metallic, hydrogen, and van der Waals bonds.
(b) Note what materials exhibit each of these bonding types.
Chapter three金属和陶瓷的结构（三种典型晶体结构、晶面、晶向） L e a r n i n g O b j e c t i v e s
After studying this chapter you should be able to do the following: 1. Describe the difference in atomic/molecular structure between crystalline and noncrystalline materials.
2. Draw unit cells for face-centered cubic, bodycentered cubic, and hexagonal close-packed crystal structures.
3. Derive the relationships between unit cell edge length and atomic radius for face-centered cubic and body-centered cubic crystal structures.
4. Compute the densities for metals having facecentered cubic and body-centered cubic crystal structures given their unit cell dimensions.
5. Sketch/describe unit cells for sodium chloride, cesium chloride, zinc blende, diamond cubic, fluorite, and perovskite crystal
structures. Do likewise for the atomic structures of graphite and a silica glass.
6. Given the chemical formula for a ceramic compound, the ionic radii of its component ions, determine the crystal structure. 7. Given three direction index integers, sketch the direction corresponding to these indices within a unit cell.
8. Specify the Miller indices for a plane that has been drawn within a unit cell.
9. Describe how face-centered cubic and hexagonal close-packed crystal structures may be generated by the stacking of close-packed planes of atoms. Do the same for the sodium chloride crystal structure in terms of close-packed planes of anions.
10. Distinguish between single crystals and polycrystalline materials. 11. Define isotropy and anisotropy with respect to material properties.
Chapter four高分子结构（基本概念） L e a r n i n g O b j e c t i v e s
After careful study of this chapter you should be able to do the following:
1. Describe a typical polymer molecule in terms of its chain structure, and, in addition, how the molecule may be generated by repeating mer units.
2. Draw mer structures for polyethylene, polyvinyl chloride, polytetrafluoroethylene, polypropylene, and polystyrene.
4. Name and briefly describe: (a) the four general types of polymer molecular structures; (d) the four types of copolymers. 5. Cite the differences in behavior and molecular structure for thermoplastic and thermosetting polymers.
6. Briefly describe the crystalline state in polymeric materials.
第5-8章 5章：固体缺陷 Learning objectives
1. Describe both vacancy and self-interstitial crystalline defects. 描述空位和自空隙原子晶体缺陷。
2. Calculate the equilibrium number of vacancies in a material at some specified temperature, given the relevant constants. 已知相关的常数，计算具体温度下材料中的平衡空位数。 6. For each of edge, screw, and mixed dislocations: (a) describe and make a drawing of the dislocation; (b) note the location of the dislocation line; and (c) indicate the direction along which the dislocation line extends.
对于刃型位错、螺型位错和混合位错：(a)描述并且画出每一种位错；(b)标出位错线的位置；(c)标明位错线的延伸方向。 7. Describe the atomic structure within the vicinity of (a) a grain