ElectricalcharacteristicsSTM32FEBKxx5.2Absolutemaximumratings
StressesabovetheabsolutemaximumratingslistedinTable4:Voltagecharacteristics,Table5:Currentcharacteristics,andTable6:Thermalcharacteristicsmaycausepermanentdamagetothedevice.Thesearestressratingsonlyandfunctionaloperationofthedeviceattheseconditionsisnotimplied.Exposuretomaximumratingconditionsforextendedperiodsmayaffectdevicereliability.Table4.SymbolVDD–VSS
VIN|?VDDx||VSSX-VSS|VoltagecharacteristicsRatingsExternal3.3Vsupplyvoltage(includingVDDAandVDD)(1)
Inputvoltageonfivevolttolerantpin(2)Inputvoltageonanyotherpin(2)
Min–0.3VSS-0.3VSS-0.35050Max4.0+5.5VDD+0.35050UnitVVariationsbetweendifferentpowerpinsVariationsbetweenallthedifferentgroundpinsElectrostaticdischargevoltage(humanbodymodel)mVVESD(HBM)
seeSection5.3.11:Absolutemaximumratings(electricalsensitivity)1.All3.3Vpower(VDD,VDDA)andground(VSS,VSSA)pinsmustalwaysbeconnectedtotheexternal3.3V
supply.2.IINJ(PIN)mustneverbeexceeded(seeTable5:Currentcharacteristics).ThisisimplicitlyinsuredifVIN
maximumisrespected.IfVINmaximumcannotberespected,theinjectioncurrentmustbelimitedexternallytotheIINJ(PIN)value.ApositiveinjectionisinducedbyVIN>VDDwhileanegativeinjectionisinducedbyVIN Table5.SymbolIVDDIVSSIIO CurrentcharacteristicsRatingsTotalcurrentintoVDDpowerlines(source)(1)TotalcurrentoutofVSSgroundlines(sink)(1)OutputcurrentsunkbyanyI/OandcontrolpinOutputcurrentsourcebyanyI/OsandcontrolpinInjectedcurrentonNRSTpin(2)(3) Max.151525-±5±5±5±25UnitmAIINJ(PIN) InjectedcurrentonHSEOSC_INandLSEOSC_INpinsInjectedcurrentonanyotherpin(4) ΣIINJ(PIN)(2) Totalinjectedcurrent(sumofallI/Oandcontrolpins)(4) 1.All3.3Vpower(VDD,VDDA)andground(VSS,VSSA)pinsmustalwaysbeconnectedtotheexternal3.3V supply.2.IINJ(PIN)mustneverbeexceeded.ThisisimplicitlyinsuredifVINmaximumisrespected.IfVINmaximum cannotberespected,theinjectioncurrentmustbelimitedexternallytotheIINJ(PIN)value.ApositiveinjectionisinducedbyVIN>VDDwhileanegativeinjectionisinducedbyVIN characteristics. 4.Whenseveralinputsaresubmittedtoacurrentinjection,themaximumΣIINJ(PIN)istheabsolutesumofthe positiveandnegativeinjectedcurrents(instantaneousvalues).TheseresultsarebasedoncharacterizationwithΣIINJ(PIN)maximumcurrentinjectiononfourI/Oportpinsofthedevice. 26/67https://houcheng-power.taobao.comwww.st.comSTM32FEBKxxTable6.ThermalcharacteristicsRatingsStoragetemperaturerangeElectricalcharacteristicsSymbolTSTGTJ Value–65to+150Unit°CMaximumjunctiontemperature(seeThermalcharacteristics)5.3 5.3.1 Operatingconditions Generaloperatingconditions Table7.SymbolfHCLKfPCLK1fPCLK2VDDVBATTA GeneraloperatingconditionsParameterInternalAHBclockfrequencyInternalAPB1clockfrequencyInternalAPB2clockfrequencyStandardoperatingvoltageBackupoperatingvoltageAmbienttemperaturerange0021.8-40ConditionsMin0Max7236723.63.6105VV°CMHzUnit5.3.2Operatingconditionsatpower-up/power-down TheparametersgiveninTable8arederivedfromtestsperformedundertheambienttemperatureconditionsummarizedinTable7.Table8.SymboltVDD Operatingconditionsatpower-up/power-downParameterVDDrise/falltimerateConditionsMin2020TypMaxUnitμs/Vms/Vhttps://houcheng-power.taobao.comwww.st.com27/67ElectricalcharacteristicsSTM32FEBKxx5.3.3Embeddedresetandpowercontrolblockcharacteristics TheparametersgiveninTable9arederivedfromtestsperformedunderambienttemperatureandVDDsupplyvoltageconditionssummarizedinTable7.Table9.SymbolEmbeddedresetandpowercontrolblockcharacteristicsParameterConditionsPLS[2:0]=000(risingedge)PLS[2:0]=000(fallingedge)PLS[2:0]=001(risingedge)PLS[2:0]=001(fallingedge)PLS[2:0]=010(risingedge)PLS[2:0]=010(fallingedge)ProgrammablevoltagedetectorlevelselectionPLS[2:0]=011(risingedge)PLS[2:0]=011(fallingedge)PLS[2:0]=100(risingedge)PLS[2:0]=100(fallingedge)PLS[2:0]=101(risingedge)PLS[2:0]=101(fallingedge)PLS[2:0]=110(risingedge)PLS[2:0]=110(fallingedge)PLS[2:0]=111(risingedge)PLS[2:0]=111(fallingedge)Min2.122.192.092.282.182.382.282.472.372.572.472.662.562.762.66Typ2.182.082.282.182.382.282.482.382.582.482.682.582.782.682.882.78100FallingedgeRisingedge1.81.841.881.924012.54.51.962.0Max2.262.162.372.272.482.382.582.482.692.592.792.692.92.832.9UnitVVVVVVVVVVVVVVVVmVVVmVmSVPVD VPVDhystVPOR/PDRVPDRhystTRSTTEMPO PVDhysteresisPoweron/powerdownresetthresholdPDRhysteresisResettemporization5.3.4Embeddedreferencevoltage TheparametersgiveninTable10arederivedfromtestsperformedunderambienttemperatureandVDDsupplyvoltageconditionssummarizedinTable7.Table10.SymbolVREFINT EmbeddedinternalreferencevoltageParameterInternalreferencevoltageConditions-45°C ThecurrentconsumptionismeasuredasdescribedinFigure10:Currentconsumptionmeasurementscheme.Maximumcurrentconsumption TheMCUisplacedunderthefollowingconditions:???AllI/OpinsareininputmodewithastaticvalueatVDDorVSS(noload)AllperipheralsaredisabledexceptifitisexplicitlymentionedTheFlashaccesstimeisadjustedtofHCLKfrequency(0waitstatefrom0to24MHz,1waitstatefrom24to48MHzand2waitstatesabove)TheparametersgiveninTable11arederivedfromtestsperformedunderambienttemperatureandVDDsupplyvoltageconditionssummarizedinTable7.Table11.SymbolMaximumcurrentconsumptioninRunandSleepmodes(1) Max(3) ParameterConditionsFHCLK72MHz48MHz36MHz24MHzTyp(2)36302221TA=85°CTBDTBDTBDTBDTA=105°CTBDTBDTBDTBDUnitExternalclockwithPLL,coderunningfromFlash,allperipheralsenabled(seeRCCregisterdescription):fPCLK1=fHCLK/2,fPCLK2=fHCLK Externalclock,PLLstopped,coderunningfromFlash,allperipheralsenabled(seeRCCregisterdescription):fPCLK1=fHCLK/2,fPCLK2=fHCLK SupplycurrentinRunmodeExternalclockwithPLL,coderunningfromRAM,allperipheralsenabled(seeRCCregisterdescription):fPCLK1=fHCLK/2,fPCLK2=fHCLK Externalclock,PLLstopped,coderunningfromRAM,allperipheralsenabled(seeRCCregisterdescription):fPCLK1=fHCLK/2,fPCLK2=fHCLK ExternalclockwithPLL,coderunningfromRAMorFlash,allperipheralsenabled(seeRCCregisterdescription):fPCLK1=fHCLK/2,fPCLK2=fHCLK Externalclock,PLLstopped,coderunningfromRAMorFlash,allperipheralsenabled(seeRCCregisterdescription):fPCLK1=fHCLK/2,fPCLK2=fHCLK 8MHz72MHz48MHz36MHz24MHz1032221311TBD45311815TBD47332017mAIDD 8MHz72MHz48MHz36MHz24MHz4.522141310TBD35232217TBD37252419mASupplycurrentinSleepmode8MHz3.5TBDTBD1.TBDstandsfortobedetermined. 2.TypicalvaluesaremeasuredatTA=25°C,andVDD=3.3V 3.Databasedoncharacterizationresults,testedinproductionatVDmax,fHCLKmax.TAmax,andcodeexecutedfromRAM. 29/67https://houcheng-power.taobao.comwww.st.comElectricalcharacteristicsTable12.MaximumcurrentconsumptioninStopandStandbymodes(1) Typ(2)SymbolParameterConditionsVDD/VBAT=2.4VVDD/VBAT=3.3VSTM32FEBKxxMax(3)TA=85°CTA=105°CUnitSupplycurrentinStopmodeIDDRegulatorinRunmode,Low-speedandhigh-speedinternalRCoscillatorsandhigh-speedoscillatorOFF(noindependentwatchdog)TBD24TBDTBDRegulatorinLowPowermode,Low-speedandhigh-speedinternalRCoscillatorsandhigh-speedoscillatorOFF(noindependentwatchdog)TBD(4)14(4)TBD(4)TBD(4)μASupplycurrentinStandbymode(5)IDD_VBATBackupdomainsupplycurrentLow-speedinternalRCoscillatorandindependentwatchdogOFF,low-speedoscillatorandRTCOFFLow-speedoscillatorandRTCONTBD(4)2(4)TBD(4)TBD(4)1(4)14(4)TBD(4)TBD(4)1.TBDstandsfortobedetermined. 2.TypicalvaluesaremeasuredatTA=25°C,VDD=3.3V,unlessotherwisespecified. 3.Databasedoncharacterizationresults,testedinproductionatVDDmax,fHCLKmax.andTAmax(forothertemperature.4.Valuesexpectedfornextsiliconrevision. 5.TohavetheStandbyconsumptionwithRTCON,addIDD_VBAT(Low-speedoscillatorandRTCON)toIDDStandby(whenVDDispresenttheBackupDomainispoweredbyVDDsupply). 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