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respectively. Surface morphology and crystallographic characteristics were evaluated using in situ RHEED, atomic force microscopy (AFM), and high-resolution X-ray diffraction (HRXRD). The magnetization of the ZnMnO ?lms was measured by using a super-conducting quantum interference device magnetometer (SQUID).
3. Results and discussion
After annealing the (0001) ZnO single-crystal sub-strate, step and terrace structure was clearly observed by AFM. By ZnO buffer layer deposition, step and terrace structure with the terrace width identical to that of ZnO substrate was recognized which indicates two-dimensional growth. The step height was measured to be 0.26 nm,corresponding to the half unit length of ZnO crystal.
Subsequently, ZnMnO ?lm with the Mn concentration ranging from 1 to 10at% was deposited on the atomically ?at ZnO buffer layer. XRD measurement was performed to check if there is a second phase, and evaluate the crystallinity of ZnMnO ?lms. The XRD pro?le in the 2θ/ω scan mode around the symmetric 0004 diffraction revealed that the ZnMnO epitaxial ?lms up to 10 at% Mn show 0001 preferred orientation without secondary phase. The pro?les also showed clear interference fringes around the symmetric ZnMnO 0004 diffraction, indicat-ing atomically ?at surface and abrupt hetero-interface . By measuring the reciprocal space mapping of 20 25 diffractions of the ZnMnO ?lms and the substrate, the lattice constants normal and parallel to the ?lm surface were able to be evaluated. As shown in Fig. 1, the lattice const antalong the c-axis linearly increases with increasing the Mn concentration and that along the a-axis does not change from that of ZnO substrate. These results show the pseudomorphic growth of ZnMnO ?lms.
As properties of these ?lms were studied with SQUID. Fig. 2 shows the magnetization curves of the ZnMnO ?lms with 5, 8 and 10at% Mn measured at 1.85 K. The experimental saturated magnetic moment (Ms,exp) of ZnMnO ?lms with 5, 8 and 10at% Mn are calculated to be 3.5, 2.3 and 1.4 μB/Mn ion, respectively. The solid lines show the calculated magnetization curves of free Mn2+ ion (S=5/2) using Brillouin function when the Ms were supposed to be above values. The magnetization behaviors of ZnMnO ?lms are well ?tted by theoretical magnetization
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curves if the theoretical saturation magnetization is identical to Ms,exp.This indicates that the ?lms have typical paramagnetic nature except the Ms values. With increasing in Mn concentration, the reduction of the magnetic moment per an Mn ion is observed. These Ms are almost identical to the theoretically calculated values if there is an antiferromagnetic interaction with nearest-neighbor Mn ions as reportedby Barilero et al.using ZnMnTe.
4. Conclusion
ZnMnO thin ?lms up to 10at% Mn were pseu domorphically grown on (0001)T ZnO single-crystal substrate by pulsed laser deposition method. They have atomically ?at surface and abrupt hetero-interface. From the results of M-H measurements, the magnetic property of ZnMnO ?lms shows the typical paramagnetism including the Mn-O-Mn superexchange interaction between the nearest neighbor Mn ions.
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附 录Ⅱ（中文翻译）
磁特性的制备方法和ZnMnO薄膜
在（0001）氧化锌单晶基体
⒈简介
稀磁半导体（DMS）通过SP-d交换耦合展现出的塞曼分裂作用已经在新颖半导体或磁性光学器件材料得到了广泛的重视。氧化锌具有长的的自旋弛豫时间是因为它的大的有效质量。此外，通过Dietl的计算预测，锰掺杂氧化锌的P型结构（ZnMnO）可能存在顺磁性。从这份推导报告中得知，许多科学家对ZnMnO磁性质进行了研究。虽然有各种有关块状和薄膜的ZnMnO磁性的报告，但是结果却是不一样的。
在本文中，氧化锌（0001）单晶基板用于提高ZnMnO DMS结晶. ZnMnO薄膜采用脉冲激光沉积(PLD)方法生长，可使ZnMnO薄膜的结晶中Mn的含量达到10％。对该晶体特性和不同锰的浓度对该晶体磁化作用进行了调查。
⒉实验
ZnMnO薄膜通过用PLD方法在单晶氧化锌（0001）上生长。氧化锌和ZnMnO陶瓷含锰浓的度从1到10 %被用作目标。为了获得原子级平整表面，ZnO单晶体基片在950摄氏度时在空气中放置10小时退火。在实验过程中，基体被放在烘箱中使氧化锌压制其外表面锌原子的解吸。450纳米厚的氧化锌缓冲层被放置在Tg范围在670 ℃至700 ℃，1×10-4的氧压力。这KrF不断重复和准分子激光能量密度的确定在5 Hz和2.0 J /平方厘米时分别使用。利用原位RHEED、原子力显微镜(AFM)、高分辨率x射线衍射仪(HRXRD)对表面形貌和晶体特性进行了评估。该ZnMnO薄膜磁性的测定采用超导量子干涉器磁强计（SQUID）。
3.结果与讨论
退火后的（0001）氧化锌单晶基体，通过AFM可以清楚地观察到由氧化锌过渡层沉淀显示出的梯田层状结构，氧化锌的梯田层状结构结相同被认为是二维增长。测量它的高度，高为0.26纳米，是对应的氧化锌晶体半单位的长度。
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随后，进行X射线衍射测量。 ZnMnO薄膜的Mn含量从1到10％，Mn是沉积在原子平面ZnO的缓冲层。进行X射线衍射测量检查是否有第二个阶段，并评估ZnMnO薄膜的结晶。在2θ/ω的X射线衍射专项扫描周围对称，0004衍射模式发现该ZnMnO外延片高达10％。0001衍射模式显示锰最初数值无二次阶段。原子平面和突变异质界面亦显示清晰的干涉条纹，干涉条纹左右对称和0004 ZnMnO 的衍射相似。通过测量20~25 ZnMnO薄膜与基体的晶格衍射倒易空间的映射常量正常和平行于薄膜表面能进行评估。如图1所示，晶格常数沿c轴的增加而线性增加锰浓度和沿a轴不会随氧化锌基体线性增加。这些结果表明，ZnMnO薄膜的伪形态生长。
由于在伪形态成长的ZnMnO薄膜中可获得含量高达10％的锰，这些板块的磁性质可以用超导量子干涉器磁强计（SQUID）来研究。图2显示了在1.85 K条件下，ZnMnO薄膜的磁化曲线与5％、8％、10％的锰计量之间的关系。实验中含5％、8％、10％的锰的ZnMnO薄膜，测出单位锰离子的饱和磁矩分别为3.5，2.3和1.4 μB/Mn。实线显示使用布里渊功能计算自由锰离子磁化曲线（S=5/2）是上述值。如果饱和磁化强度的理论是相同的那么可以对ZnMnO薄膜的磁化行为通过理论以及磁化曲线拟合。这表明，薄膜具有典型的顺磁性，通过观察随着锰浓度的增加，而每一个锰离子磁矩会减少，这些MS几乎与理论计算值相同，如果有一个与最邻近锰离子antiferromagneticinteraction如由Barilero等的报道使用ZnMnTe。
4.结论
（0001）氧化锌单晶用脉冲激光沉积法制得的形态成长的ZnMnO薄膜的基板上，Mn的含量高达10％。他们在原子平面和突然异质界面上。从他的M-H的测量结果可知，ZnMnO薄膜的磁学性质包括相邻锰离子的典型的顺磁性和Mn-O-Mn之间的超交换相互作用。
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